TSM70N600 taiwan semiconductor document number: ds_p0000138 1 version: c15 n-channel power mosfet 700v, 8a, 0.6 ? features super-junction technology high performance due to small figure-of-merit high ruggedness performance high commutation performance key performance parameters parameter value unit v ds 700 v r ds(on) (max) 0.6 ? q g 12.6 nc application power supply lighting ito - 220 to - 251 (ipak) to - 252 (dpak) notes: moisture sensitivity level: level 3. per j-std-020 absolute m aximum ratings (t a = 25c unless otherwise noted) parameter symbol ito-220 ipak/dpak unit drain-source voltage v ds 700 v gate-source voltage v gs 30 v continuous drain current (note 1) t c = 25c i d 8 a t c = 100c 4.8 pulsed drain current (note 2) i dm 24 a total power dissipation @ t c = 25c p dtot 32 83 w single pulsed avalanche energy (note 3) e as 100 mj single pulsed avalanche current (note 3) i as 2 a operating junction and storage temperature range t j , t stg - 55 to +150 c thermal performance parameter symbol ito-220 ipak/dpak unit junction to case thermal resistance r ? jc 3.9 1.5 c/w junction to ambient thermal resistance r ? ja 62 c/w notes: r ? ja is the sum of the junction-to-case and case-to-amb ient thermal resistances. the case thermal referenc e is defined at the solder mounting surface of the drain pins. r ? ja is guaranteed by design while r ? ca is determined by the users board design. r ? ja shown below for single device operation on fr-4 pcb in still air.
TSM70N600 taiwan semiconductor document number: ds_p0000138 2 version: c15 electrical specifications (t a = 25c unless otherwise noted) parameter conditions symbol min typ max unit static (note 4) drain-source breakdown voltage v gs = 0v, i d = 250a bv dss 700 -- -- v gate threshold voltage v ds = v gs , i d = 250a v gs(th) 2 2.9 4 v gate body leakage v gs = 30v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds = 700v, v gs = 0v i dss -- -- 1 a drain-source on-state resistance v gs = 10v, i d = 4a r ds(on) -- 0.5 0.6 ? dynamic (note 5) total gate charge v ds = 380v, i d = 8a, v gs = 10v q g -- 12.6 -- nc gate-source charge q gs -- 2.9 -- gate-drain charge q gd -- 4.5 -- input capacitance v ds = 100v, v gs = 0v, f = 1.0mhz c iss -- 743 -- pf output capacitance c oss -- 63 -- gate resistance f = 1mhz, open drain r g -- 3.19 -- ? switching (note 6) turn-on delay time v dd = 380v, r gen = 25 ? , i d = 8a, v gs = 10v, t d(on) -- 21 -- ns turn-on rise time t r -- 15 -- turn-off delay time t d(off) -- 40 -- turn-off fall time t f -- 9 -- source-drain diode (note 4) forward on voltage i s = 8a, v gs = 0v v sd -- 0.84 1.4 v reverse recovery time v r =200v, i s = 4a di f /dt = 100a/ s t rr -- 187.9 -- ns reverse recovery charge q rr -- 1.4 -- c notes: 1. current limited by package 2. pulse width limited by the maximum junction tempe rature 3. l = 50mh, i as = 2a, v dd = 50v, r g = 25 ? , starting t j = 25 o c 4. pulse test: pw 300s, duty cycle 2% 5. for design aid only, not subject to production test ing. 6. switching time is essentially independent of oper ating temperature.
TSM70N600 taiwan semiconductor document number: ds_p0000138 3 version: c15 ordering information part no. package packing TSM70N600ci c0g ito-220 50pcs / tube TSM70N600ch c5g to-251 (ipak) 75pcs / tube TSM70N600cp rog to-252 (dpak) 2,500pcs / 13 reel note: 1. compliant to rohs directive 2011/65/eu and in acco rdance to weee 2002/96/ec 2. halogen-free according to iec 61249-2-21 definiti on
TSM70N600 taiwan semiconductor document number: ds_p0000138 4 version: c15 characteristics curves (t c = 25c unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current gate-source voltage vs. gate charge on-resistance vs. junction temperature source-drain diode forward current vs. voltage
TSM70N600 taiwan semiconductor document number: ds_p0000138 5 version: c15 characteristics curves (t c = 25c unless otherwise noted) capacitance vs. drain-source voltage bv dss vs. junction temperature maximum safe operating area (dpak/ipak) maximum safe operating area (ito-220) normalized thermal transient impedance (ito-220) 10 - 4 10 - 3 10 - 2 10 - 1 10 0 normalized effective transient thermal impedance 10 - 7 10 - 6 10 - 5 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 square wave pulse duration (s) duty=0.5 duty=0.2 duty=0.1 duty=0.05 duty=0.02 duty=0.01 single pulse 10 0
TSM70N600 taiwan semiconductor document number: ds_p0000138 6 version: c15 electrical characteristics curves (t c = 25c unless otherwise noted) normalized thermal transient impedance (dpak/ipak) 10 - 4 10 - 3 10 - 2 10 - 1 10 0 normalized effective transient thermal impedance 10 - 7 10 - 6 10 - 5 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 square wave pulse duration (s) 10 1 duty=0.5 duty=0.2 duty=0.1 duty=0.05 duty=0.02 duty=0.01 single pulse
TSM70N600 taiwan semiconductor document number: ds_p0000138 7 version: c15 package outline dimensions (unit: millimeters) ito-220 marking diagram g = halogen free y = year code ww = week code (01~52) f = factory code
TSM70N600 taiwan semiconductor document number: ds_p0000138 8 version: c15 package outline dimensions (unit: millimeters) to-251 marking diagram y = year code m = month code for halogen free product o =jan p =feb q =mar r =apr s =may t =jun u =jul v =aug w =sep x =oct y =nov z =dec l = lot code (1~9, a~z)
TSM70N600 taiwan semiconductor document number: ds_p0000138 9 version: c15 package outline dimensions (unit: millimeters) to-252 suggested pad layout (unit: millimeters) marking diagram y = year code m = month code for halogen free product o =jan p =feb q =mar r =apr s =may t =jun u =jul v =aug w =sep x =oct y =nov z =dec l = lot code (1~9, a~z)
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